Positive magnetoresistance in Fe3Se4 nanowires | |
Li, D.1; Jiang, J. J.; Liu, W.; Zhang, Z. D. | |
Corresponding Author | Li, D.(dali@imr.ac.cn) |
2011-04-01 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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ISSN | 0021-8979 |
Volume | 109Issue:7Pages:3 |
Abstract | We report the magnetotransport properties of Fe3Se4 nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe3Se4 nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544508] |
Funding Organization | National Natural Science Foundation of China ; National Basic Research Program of China ; Ministry of Science and Technology of China |
DOI | 10.1063/1.3544508 |
Indexed By | SCI |
Language | 英语 |
Funding Project | National Natural Science Foundation of China[50831006] ; National Natural Science Foundation of China[50701045] ; National Basic Research Program of China[2010CB934603] ; Ministry of Science and Technology of China |
WOS Research Area | Physics |
WOS Subject | Physics, Applied |
WOS ID | WOS:000289952100114 |
Publisher | AMER INST PHYSICS |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/105229 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Li, D. |
Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China |
Recommended Citation GB/T 7714 | Li, D.,Jiang, J. J.,Liu, W.,et al. Positive magnetoresistance in Fe3Se4 nanowires[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):3. |
APA | Li, D.,Jiang, J. J.,Liu, W.,&Zhang, Z. D..(2011).Positive magnetoresistance in Fe3Se4 nanowires.JOURNAL OF APPLIED PHYSICS,109(7),3. |
MLA | Li, D.,et al."Positive magnetoresistance in Fe3Se4 nanowires".JOURNAL OF APPLIED PHYSICS 109.7(2011):3. |
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