Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy

doi:10.1016/j.apsusc.2011.05.096

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	Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy
	Yang, Qiumin 1,2; Zhao, Jie 1,2; Guan, Min 1,2; Liu, Chao 1,2; Cui, Lijie 1,2; Han, Dejun 3; Zeng, Yiping 1,2
通讯作者	Zeng, Yiping(ypzeng@red.semi.ac.cn)
	2011-08-15
发表期刊	APPLIED SURFACE SCIENCE
ISSN	0169-4332
卷号	257 期号:21 页码:9038-9043
摘要	CdSe thin films have been grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). The effects of substrate temperature and annealing treatment on the structural properties of CdSe layers were investigated. The growth rate slightly decreases due to the accelerated desorption of Cd from CdSe surface with an increase in the temperature. The sample grown at 260 degrees C shows a polycrystalline structure with rough surface. As the temperature increases over 300 degrees C, crystalline CdSe (0 0 1) epilayers with zinc-blende structure are achieved and the structural quality is improved remarkably. The epilayer grown at 340 degrees C displays the narrowest full-width at half-maximum (FWHM) from (0 0 4) reflection in double-crystal Xray rocking curve (DCXRC) and the smallest root-mean-square (RMS) roughness of 0.816 nm. Additionally, samples fabricated at 320 degrees C were annealed in air for 30 min to study the films' thermal stability. X-ray diffraction (XRD) results indicate that the zinc-blende structure remains unchanged when the annealing temperature is elevated to 460 degrees C, meaning a good thermal stability of the cubic CdSe epilayers. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
关键词	CdSe Molecular beam epitaxy Reflection high energy electron diffraction X-ray diffraction Atomic force microscopy
资助者	Knowledge Innovation Program Foundation of Institute of semiconductors, CAS ; National Natural Science Foundation of China
DOI	10.1016/j.apsusc.2011.05.096
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Program Foundation of Institute of semiconductors, CAS[09S1010001] ; National Natural Science Foundation of China[0913120000]
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000292539700046
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/105242
专题	中国科学院金属研究所
通讯作者	Zeng, Yiping
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Beijing Normal Univ, Coll Nucl Sci & Technol, Beijing 100875, Peoples R China
推荐引用方式 GB/T 7714	Yang, Qiumin,Zhao, Jie,Guan, Min,et al. Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(21):9038-9043.
APA	Yang, Qiumin.,Zhao, Jie.,Guan, Min.,Liu, Chao.,Cui, Lijie.,...&Zeng, Yiping.(2011).Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy.APPLIED SURFACE SCIENCE,257(21),9038-9043.
MLA	Yang, Qiumin,et al."Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy".APPLIED SURFACE SCIENCE 257.21(2011):9038-9043.