Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition

doi:10.1088/0256-307X/28/4/048102

IMR OpenIR

	Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition
	Wei Meng 1; Wang Xiao-Liang 1,2; Xiao Hong-Ling 1,2; Wang Cui-Mei 1,2; Pan Xu 1; Hou Qi-Feng 1; Wang Zhan-Guo 2
通讯作者	Wei Meng(mengw@semi.ac.cn)
	2011-04-01
发表期刊	CHINESE PHYSICS LETTERS
ISSN	0256-307X
卷号	28 期号:4 页码:4
摘要	A 2 mu m high quality crack-free GaN film was successfully grown on 2-inch Si(111) substrates by metal organic chemical vapor deposition with a high temperature AlN/graded-AlGaN multibuffer and an AlN/GaN superlattice interlayer. It is found that the structures, as well as the thicknesses of the multibuffer and interlayer, are crucial for the growth of a crack-free GaN epilayer. The GaN(0002) XRD FWHM of the crack-free sample is 479.8 arcsec, indicating good crystal quality. An AlGaN/GaN heterostructure was grown and tested by Van der Pauw Hall measurement. The electron mobility of two-dimensional electron gas increases from 1928 cm(2)/V.s to 12277 cm(2)/V.s when the test-temperature decreases from room temperature to liquid nitrogen temperature. The electron mobility is comparable to that of AlGaN/GaN heterostructures grown on sapphire, and the largest value is obtained for an AlGaN/GaN/Si(111) heterostructure grown by metal organic chemical vapor deposition.
资助者	Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Basic Research Program of China
DOI	10.1088/0256-307X/28/4/048102
收录类别	SCI
语种	英语
资助项目	Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[IS-CAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Science Foundation of China[60890193] ; National Natural Science Foundation of China[60906006] ; National Basic Research Program of China[2006CB604905] ; National Basic Research Program of China[2010CB327503]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000289195200062
出版者	IOP PUBLISHING LTD
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/105325
专题	中国科学院金属研究所
通讯作者	Wei Meng
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wei Meng,Wang Xiao-Liang,Xiao Hong-Ling,et al. Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. CHINESE PHYSICS LETTERS,2011,28(4):4.
APA	Wei Meng.,Wang Xiao-Liang.,Xiao Hong-Ling.,Wang Cui-Mei.,Pan Xu.,...&Wang Zhan-Guo.(2011).Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS,28(4),4.
MLA	Wei Meng,et al."Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition".CHINESE PHYSICS LETTERS 28.4(2011):4.