IMR OpenIR
High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films
Zhang, Feng1,2; Sun, Guosheng1,2; Huang, Huolin3; Wu, Zhengyun3; Wang, Lei2; Zhao, Wanshun2; Liu, Xingfang2; Yan, Guoguo2; Zheng, Liu2; Dong, Lin2; Zeng, Yiping1,2
Corresponding AuthorZhang, Feng(fzhang@semi.ac.cn)
2011-12-01
Source PublicationIEEE ELECTRON DEVICE LETTERS
ISSN0741-3106
Volume32Issue:12Pages:1722-1724
Abstract4H-SiC-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors with thermally grown SiO2 and evaporated Al2O3/SiO2 (A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. Ultralow dark currents of 3.25 x 10(-10) and 9.75 x 10(-9) A/cm(2) and high UV-to-visible rejection ratios of > 2 x 10(3) have been achieved at 10 V. The peak responsivities of these devices were separately 30 mA/W at 260 nm and 50 mA/W at 270 nm at 10 V. These results demonstrate that S/4H-SiC and A/S/4H-SiC MIS photodetectors are promising candidates to be applied in optoelectronic integrated circuits.
KeywordMetal-insulator-semiconductor (MIS) devices photodetectors ultraviolet (UV) detectors
DOI10.1109/LED.2011.2168597
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000297352500025
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105424
Collection中国科学院金属研究所
Corresponding AuthorZhang, Feng
Affiliation1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
3.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Feng,Sun, Guosheng,Huang, Huolin,et al. High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(12):1722-1724.
APA Zhang, Feng.,Sun, Guosheng.,Huang, Huolin.,Wu, Zhengyun.,Wang, Lei.,...&Zeng, Yiping.(2011).High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films.IEEE ELECTRON DEVICE LETTERS,32(12),1722-1724.
MLA Zhang, Feng,et al."High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films".IEEE ELECTRON DEVICE LETTERS 32.12(2011):1722-1724.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhang, Feng]'s Articles
[Sun, Guosheng]'s Articles
[Huang, Huolin]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhang, Feng]'s Articles
[Sun, Guosheng]'s Articles
[Huang, Huolin]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhang, Feng]'s Articles
[Sun, Guosheng]'s Articles
[Huang, Huolin]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.