Interfacial structure of V2AlC thin films deposited on (11(2)over-bar0)-sapphire

doi:10.1016/j.scriptamat.2010.10.035

IMR OpenIR

	Interfacial structure of V2AlC thin films deposited on (11(2)over-bar0)-sapphire
	Sigumonrong, Darwin P.; Zhang, Jie 2; Zhou, Yanchun 2; Music, Denis ; Emmerlich, Jens ; Mayer, Joachim 1; Schneider, Jochen M.
通讯作者	Zhang, Jie(zhang@mch.rwth-aachen.de)
	2011-02-01
发表期刊	SCRIPTA MATERIALIA
ISSN	1359-6462
卷号	64 期号:4 页码:347-350
摘要	Local epitaxy between V2AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V2AlC on (11 (2) over bar0)-sapphire. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词	MAX-phase thin film TEM Epitaxial growth Ab initio calculation
资助者	Deutsche Forschungsgemeinschaft (DFG) within the Collaborative Research Center
DOI	10.1016/j.scriptamat.2010.10.035
收录类别	SCI
语种	英语
资助项目	Deutsche Forschungsgemeinschaft (DFG) within the Collaborative Research Center[561]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000285951600011
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：23[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/105469
专题	中国科学院金属研究所
通讯作者	Zhang, Jie
作者单位	1.Rhein Westfal TH Aachen, Cent Facil Electron Microscopy, D-52074 Aachen, Germany 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Sigumonrong, Darwin P.,Zhang, Jie,Zhou, Yanchun,et al. Interfacial structure of V2AlC thin films deposited on (11(2)over-bar0)-sapphire[J]. SCRIPTA MATERIALIA,2011,64(4):347-350.
APA	Sigumonrong, Darwin P..,Zhang, Jie.,Zhou, Yanchun.,Music, Denis.,Emmerlich, Jens.,...&Schneider, Jochen M..(2011).Interfacial structure of V2AlC thin films deposited on (11(2)over-bar0)-sapphire.SCRIPTA MATERIALIA,64(4),347-350.
MLA	Sigumonrong, Darwin P.,et al."Interfacial structure of V2AlC thin films deposited on (11(2)over-bar0)-sapphire".SCRIPTA MATERIALIA 64.4(2011):347-350.