| Comparison of as-grown and annealed GaN/InGaN:Mg samples | |
| Deng, Qingwen1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2; Wang, Cuimei1,2; Yin, Haibo1,2; Chen, Hong1,2; Lin, Defeng1; Jiang, Lijuan1,2; Feng, Chun1,2; Li, Jinmin1,2,3; Wang, Zhanguo2; Hou, Xun3 | |
| Corresponding Author | Deng, Qingwen(daven@semi.ac.cn) |
| 2011-08-31 | |
| Source Publication | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| ISSN | 0022-3727 |
| Volume | 44Issue:34Pages:5 |
| Abstract | Mg-doped InGaN was grown on unintentionally doped GaN layer, and Mg and defect behaviours in both GaN and InGaN : Mg were investigated through photoluminescence measurement at 7K. Mg acceptor was found in unintentionally doped GaN after thermal annealing in N(2) ambient, and Mg activation energy was estimated to be 200 meV and 110 meV for GaN and InGaN, respectively. Particularly, the ultraviolet band (3.0-3.2 eV) in the GaN layer was infrequently observed in the unannealed sample but quenched in the annealed sample; this band may be associated with oxygen-substituted nitrogen defects. Moreover, the measurement errors of photoluminescence and x-ray diffraction originated from strain were taken into account. |
| Funding Organization | Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences |
| DOI | 10.1088/0022-3727/44/34/345101 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000294761500005 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/105550 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Deng, Qingwen |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. Comparison of as-grown and annealed GaN/InGaN:Mg samples[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(34):5. |
| APA | Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).Comparison of as-grown and annealed GaN/InGaN:Mg samples.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(34),5. |
| MLA | Deng, Qingwen,et al."Comparison of as-grown and annealed GaN/InGaN:Mg samples".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.34(2011):5. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment