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Comparison of as-grown and annealed GaN/InGaN:Mg samples
Deng, Qingwen1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2; Wang, Cuimei1,2; Yin, Haibo1,2; Chen, Hong1,2; Lin, Defeng1; Jiang, Lijuan1,2; Feng, Chun1,2; Li, Jinmin1,2,3; Wang, Zhanguo2; Hou, Xun3
Corresponding AuthorDeng, Qingwen(daven@semi.ac.cn)
2011-08-31
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume44Issue:34Pages:5
AbstractMg-doped InGaN was grown on unintentionally doped GaN layer, and Mg and defect behaviours in both GaN and InGaN : Mg were investigated through photoluminescence measurement at 7K. Mg acceptor was found in unintentionally doped GaN after thermal annealing in N(2) ambient, and Mg activation energy was estimated to be 200 meV and 110 meV for GaN and InGaN, respectively. Particularly, the ultraviolet band (3.0-3.2 eV) in the GaN layer was infrequently observed in the unannealed sample but quenched in the annealed sample; this band may be associated with oxygen-substituted nitrogen defects. Moreover, the measurement errors of photoluminescence and x-ray diffraction originated from strain were taken into account.
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI10.1088/0022-3727/44/34/345101
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000294761500005
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105550
Collection中国科学院金属研究所
Corresponding AuthorDeng, Qingwen
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. Comparison of as-grown and annealed GaN/InGaN:Mg samples[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(34):5.
APA Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).Comparison of as-grown and annealed GaN/InGaN:Mg samples.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(34),5.
MLA Deng, Qingwen,et al."Comparison of as-grown and annealed GaN/InGaN:Mg samples".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.34(2011):5.
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