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Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
Wu Meng1,2; Zeng Yi-Ping1,2,3; Wang Jun-Xi3; Hu Qiang3
Corresponding AuthorWu Meng(wumeng@semi.ac.cn)
2011-06-01
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume28Issue:6Pages:4
AbstractA low-temperature GaN (LT-GaN) nucleation layer is grown on a patterned sapphire substrate (PSS) using metal-organic chemical vapor deposition (MOCVD). The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered. Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed. A pattern model is also proposed to analyze the possible mechanisms in atomic scale.
DOI10.1088/0256-307X/28/6/068502
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000291243400088
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105601
Collection中国科学院金属研究所
Corresponding AuthorWu Meng
Affiliation1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Wu Meng,Zeng Yi-Ping,Wang Jun-Xi,et al. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. CHINESE PHYSICS LETTERS,2011,28(6):4.
APA Wu Meng,Zeng Yi-Ping,Wang Jun-Xi,&Hu Qiang.(2011).Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate.CHINESE PHYSICS LETTERS,28(6),4.
MLA Wu Meng,et al."Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate".CHINESE PHYSICS LETTERS 28.6(2011):4.
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