| Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate | |
| Wu Meng1,2; Zeng Yi-Ping1,2,3; Wang Jun-Xi3; Hu Qiang3 | |
| 通讯作者 | Wu Meng(wumeng@semi.ac.cn) |
| 2011-06-01 | |
| 发表期刊 | CHINESE PHYSICS LETTERS
 |
| ISSN | 0256-307X |
| 卷号 | 28期号:6页码:4 |
| 摘要 | A low-temperature GaN (LT-GaN) nucleation layer is grown on a patterned sapphire substrate (PSS) using metal-organic chemical vapor deposition (MOCVD). The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered. Meanwhile, effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed. A pattern model is also proposed to analyze the possible mechanisms in atomic scale. |
| DOI | 10.1088/0256-307X/28/6/068502 |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| WOS记录号 | WOS:000291243400088 |
| 出版者 | IOP PUBLISHING LTD |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/105604 |
| 专题 | 中国科学院金属研究所 |
| 通讯作者 | Wu Meng |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu Meng,Zeng Yi-Ping,Wang Jun-Xi,et al. Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. CHINESE PHYSICS LETTERS,2011,28(6):4. |
| APA | Wu Meng,Zeng Yi-Ping,Wang Jun-Xi,&Hu Qiang.(2011).Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate.CHINESE PHYSICS LETTERS,28(6),4. |
| MLA | Wu Meng,et al."Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate".CHINESE PHYSICS LETTERS 28.6(2011):4. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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