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Theoretical study on InxGa1-xN/GaN quantum dots solar cell
Deng, Qingwen1; Wang, Xiaoliang1,2; Yang, Cuibai1,2; Xiao, Hongling1,2; Wang, Cuimei1,2; Yin, Haibo1,2; Hou, Qifeng1; Li, Jinmin1; Wang, Zhanguo2; Hou, Xun
Corresponding AuthorDeng, Qingwen(daven@semi.ac.cn)
2011
Source PublicationPHYSICA B-CONDENSED MATTER
ISSN0921-4526
Volume406Issue:1Pages:73-76
AbstractIn this work, the structure of InxGa1-xN/GaN quantum dots solar cell is investigated by solving the Schrodinger equation in light of the Kronig-Penney model. Compared to p-n homojunction and heterojunction solar cells, the InxGa1-xN/GaN quantum clots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well. (C) 2010 Elsevier B.V. All rights reserved.
KeywordEfficiency Quantum dot GaN
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI10.1016/j.physb.2010.10.020
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; Key Development Program for Basic Research of China[2006CB604905] ; Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS Research AreaPhysics
WOS SubjectPhysics, Condensed Matter
WOS IDWOS:000285212200016
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:33[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105678
Collection中国科学院金属研究所
Corresponding AuthorDeng, Qingwen
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Deng, Qingwen,Wang, Xiaoliang,Yang, Cuibai,et al. Theoretical study on InxGa1-xN/GaN quantum dots solar cell[J]. PHYSICA B-CONDENSED MATTER,2011,406(1):73-76.
APA Deng, Qingwen.,Wang, Xiaoliang.,Yang, Cuibai.,Xiao, Hongling.,Wang, Cuimei.,...&Hou, Xun.(2011).Theoretical study on InxGa1-xN/GaN quantum dots solar cell.PHYSICA B-CONDENSED MATTER,406(1),73-76.
MLA Deng, Qingwen,et al."Theoretical study on InxGa1-xN/GaN quantum dots solar cell".PHYSICA B-CONDENSED MATTER 406.1(2011):73-76.
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