Theoretical study on InxGa1-xN/GaN quantum dots solar cell

doi:10.1016/j.physb.2010.10.020

IMR OpenIR

	Theoretical study on InxGa1-xN/GaN quantum dots solar cell
	Deng, Qingwen 1; Wang, Xiaoliang 1,2; Yang, Cuibai 1,2; Xiao, Hongling 1,2; Wang, Cuimei 1,2; Yin, Haibo 1,2; Hou, Qifeng 1; Li, Jinmin 1; Wang, Zhanguo 2; Hou, Xun
通讯作者	Deng, Qingwen(daven@semi.ac.cn)
	2011
发表期刊	PHYSICA B-CONDENSED MATTER
ISSN	0921-4526
卷号	406 期号:1 页码:73-76
摘要	In this work, the structure of InxGa1-xN/GaN quantum dots solar cell is investigated by solving the Schrodinger equation in light of the Kronig-Penney model. Compared to p-n homojunction and heterojunction solar cells, the InxGa1-xN/GaN quantum clots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well. (C) 2010 Elsevier B.V. All rights reserved.
关键词	Efficiency Quantum dot GaN
资助者	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI	10.1016/j.physb.2010.10.020
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; Key Development Program for Basic Research of China[2006CB604905] ; Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
WOS记录号	WOS:000285212200016
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：40[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/105678
专题	中国科学院金属研究所
通讯作者	Deng, Qingwen
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Deng, Qingwen,Wang, Xiaoliang,Yang, Cuibai,et al. Theoretical study on InxGa1-xN/GaN quantum dots solar cell[J]. PHYSICA B-CONDENSED MATTER,2011,406(1):73-76.
APA	Deng, Qingwen.,Wang, Xiaoliang.,Yang, Cuibai.,Xiao, Hongling.,Wang, Cuimei.,...&Hou, Xun.(2011).Theoretical study on InxGa1-xN/GaN quantum dots solar cell.PHYSICA B-CONDENSED MATTER,406(1),73-76.
MLA	Deng, Qingwen,et al."Theoretical study on InxGa1-xN/GaN quantum dots solar cell".PHYSICA B-CONDENSED MATTER 406.1(2011):73-76.