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Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN
Hou Qi-Feng1; Wang Xiao-Liang1,2; Xiao Hong-Ling1,2; Wang Cui-Mei1,2; Yang Cui-Bai1,2; Yin Hai-Bo1; Li Jin-Min1; Wang Zhan-Guo2
Corresponding AuthorHou Qi-Feng(qfhou@semi.ac.cn)
2011-03-01
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume28Issue:3Pages:4
AbstractYellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence. Intense yellow and blue luminescence bands are observed in semi-insulating GaN, while in n-GaN the yellow luminescence and blue luminescence bands are very weak. The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density. The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate. It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations. An approximately 3.35 eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN. A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.
Funding OrganizationChinese Academy of Sciences ; National Natural Sciences Foundation of China ; National Basic Research Program of China
DOI10.1088/0256-307X/28/3/037102
Indexed BySCI
Language英语
Funding ProjectChinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Sciences Foundation of China[60890193] ; National Natural Sciences Foundation of China[60906006] ; National Basic Research Program of China[2006CB604905] ; National Basic Research Program of China[2010CB327503]
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000288120900050
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/105909
Collection中国科学院金属研究所
Corresponding AuthorHou Qi-Feng
Affiliation1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Hou Qi-Feng,Wang Xiao-Liang,Xiao Hong-Ling,et al. Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN[J]. CHINESE PHYSICS LETTERS,2011,28(3):4.
APA Hou Qi-Feng.,Wang Xiao-Liang.,Xiao Hong-Ling.,Wang Cui-Mei.,Yang Cui-Bai.,...&Wang Zhan-Guo.(2011).Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN.CHINESE PHYSICS LETTERS,28(3),4.
MLA Hou Qi-Feng,et al."Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN".CHINESE PHYSICS LETTERS 28.3(2011):4.
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