Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target

doi:10.1016/j.tsf.2011.04.239

IMR OpenIR

	Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target
	Meng, Lijian 1,2; Meng, Hui 3; Gong, Wenjie 3; Liu, Wei 3; Zhang, Zhidong 3
通讯作者	Meng, Lijian(ljm@isep.ipp.pt)
	2011-09-01
发表期刊	THIN SOLID FILMS
ISSN	0040-6090
卷号	519 期号:22 页码:7627-7631
摘要	Bi2Se3 thin films were deposited on the (100) oriented Si substrates by pulsed laser deposition technique at different substrate temperatures (room temperature -400 degrees C). The effects of the substrate temperature on the structural and electrical properties of the Bi2Se3 films were studied. The film prepared at room temperature showed a very poor polycrystalline structure with the mainly orthorhombic phase. The crystallinity of the films was improved by heating the substrate during the deposition and the crystal phase of the film changed to the rhombohedral phase as the substrate temperature was higher than 200 degrees C. The stoichiometry of the films and the chemical state of Bi and Se elements in the films were studied by fitting the Se 3d and the Bi 4d5/2 peaks of the X-ray photoelectron spectra. The hexagonal structure was seen clearly for the film prepared at the substrate temperature of 400 degrees C. The surface roughness of the film increased as the substrate temperature was increased. The electrical resistivity of the film decreased from 1 x 10(-3) to 3 x 10(-4) Omega cm as the substrate temperature was increased from room temperature to 400 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
关键词	Pulsed laser deposition Thin films Bismuth selenide X-ray diffraction Electrical properties and measurements Surface morphology Scanning electron microscopy Crystal microstructure
资助者	SYNL
DOI	10.1016/j.tsf.2011.04.239
收录类别	SCI
语种	英语
资助项目	SYNL
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000295057000002
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：38[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/106022
专题	中国科学院金属研究所
通讯作者	Meng, Lijian
作者单位	1.Inst Super Engn Porto, Dept Fis, P-4200072 Oporto, Portugal 2.Univ Minho, Ctr Fis, P-4800058 Guimaraes, Portugal 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Meng, Lijian,Meng, Hui,Gong, Wenjie,et al. Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target[J]. THIN SOLID FILMS,2011,519(22):7627-7631.
APA	Meng, Lijian,Meng, Hui,Gong, Wenjie,Liu, Wei,&Zhang, Zhidong.(2011).Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target.THIN SOLID FILMS,519(22),7627-7631.
MLA	Meng, Lijian,et al."Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target".THIN SOLID FILMS 519.22(2011):7627-7631.