IMR OpenIR
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
Li Hui1; Zhou Kai1; Pang Jingbiao1; Shao Yundong1; Wang Zhu1; Zhao Youwen2
Corresponding AuthorLi Hui()
2011-07-07
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN0268-1242
Volume26Issue:7Pages:6
AbstractDefects in as-grown undoped and tellurium-doped gallium antimonide were studied using positron lifetime and coincidence Doppler broadening measurements. The grown-in defects in these samples were supposed to be Ga vacancy (V-Ga)-related defects. More V-Ga-related defects were introduced into undoped and lightly Te-doped GaSb after electron irradiation at the doses of 1.0 x 10(17) cm(-2) and 1.0 x 10(18) cm(-2); however, in the heavily Te-doped GaSb, electron irradiation led to partial recovery of VGa. The role of Te content in the defect evolution is also discussed.
Funding OrganizationNatural Science Foundation of China
DOI10.1088/0268-1242/26/7/075016
Indexed BySCI
Language英语
Funding ProjectNatural Science Foundation of China[10775107]
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS IDWOS:000289554400017
PublisherIOP PUBLISHING LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/106518
Collection中国科学院金属研究所
Corresponding AuthorLi Hui
Affiliation1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Li Hui,Zhou Kai,Pang Jingbiao,et al. Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(7):6.
APA Li Hui,Zhou Kai,Pang Jingbiao,Shao Yundong,Wang Zhu,&Zhao Youwen.(2011).Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,26(7),6.
MLA Li Hui,et al."Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26.7(2011):6.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li Hui]'s Articles
[Zhou Kai]'s Articles
[Pang Jingbiao]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li Hui]'s Articles
[Zhou Kai]'s Articles
[Pang Jingbiao]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li Hui]'s Articles
[Zhou Kai]'s Articles
[Pang Jingbiao]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.