Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation

doi:10.1088/0268-1242/26/7/075016

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	Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
	Li Hui 1; Zhou Kai 1; Pang Jingbiao 1; Shao Yundong 1; Wang Zhu 1; Zhao Youwen 2
通讯作者	Li Hui()
	2011-07-07
发表期刊	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN	0268-1242
卷号	26 期号:7 页码:6
摘要	Defects in as-grown undoped and tellurium-doped gallium antimonide were studied using positron lifetime and coincidence Doppler broadening measurements. The grown-in defects in these samples were supposed to be Ga vacancy (V-Ga)-related defects. More V-Ga-related defects were introduced into undoped and lightly Te-doped GaSb after electron irradiation at the doses of 1.0 x 10(17) cm(-2) and 1.0 x 10(18) cm(-2); however, in the heavily Te-doped GaSb, electron irradiation led to partial recovery of VGa. The role of Te content in the defect evolution is also discussed.
资助者	Natural Science Foundation of China
DOI	10.1088/0268-1242/26/7/075016
收录类别	SCI
语种	英语
资助项目	Natural Science Foundation of China[10775107]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000289554400017
出版者	IOP PUBLISHING LTD
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/106518
专题	中国科学院金属研究所
通讯作者	Li Hui
作者单位	1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li Hui,Zhou Kai,Pang Jingbiao,et al. Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2011,26(7):6.
APA	Li Hui,Zhou Kai,Pang Jingbiao,Shao Yundong,Wang Zhu,&Zhao Youwen.(2011).Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,26(7),6.
MLA	Li Hui,et al."Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 26.7(2011):6.