| Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy | |
| Pan, Xu1; Wang, Xiaoliang1,2; Xiao, Hongling1,2; Wang, Cuimei1,2; Yang, Cuibai1,2; Li, Wei2; Wang, Weiying2; Jin, Peng2; Wang, Zhanguo1,2 | |
| Corresponding Author | Pan, Xu(xpan@semi.ac.cn) |
| 2011-08-01 | |
| Source Publication | APPLIED SURFACE SCIENCE
 |
| ISSN | 0169-4332 |
| Volume | 257Issue:20Pages:8718-8721 |
| Abstract | Al(0.91)Ga(0.09)N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0 0 0 1) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al(0.91)Ga(0.09)N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (similar to 90 meV) in Al(0.91)Ga(0.09)N. The formation of these localized states provides a favorable condition for efficient light emission. (C) 2011 Elsevier B.V. All rights reserved. |
| Keyword | Photoluminescence Raman scattering Pulsed atomic layer epitaxy AlGaN alloys |
| Funding Organization | Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences |
| DOI | 10.1016/j.apsusc.2011.05.055 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] |
| WOS Research Area | Chemistry ; Materials Science ; Physics |
| WOS Subject | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000291725100070 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/107186 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Pan, Xu |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(20):8718-8721. |
| APA | Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Wang, Zhanguo.(2011).Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy.APPLIED SURFACE SCIENCE,257(20),8718-8721. |
| MLA | Pan, Xu,et al."Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy".APPLIED SURFACE SCIENCE 257.20(2011):8718-8721. |
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