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Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy
Pan, Xu1; Wang, Xiaoliang1,2; Xiao, Hongling1,2; Wang, Cuimei1,2; Yang, Cuibai1,2; Li, Wei2; Wang, Weiying2; Jin, Peng2; Wang, Zhanguo1,2
Corresponding AuthorPan, Xu(xpan@semi.ac.cn)
2011-08-01
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume257Issue:20Pages:8718-8721
AbstractAl(0.91)Ga(0.09)N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0 0 0 1) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al(0.91)Ga(0.09)N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (similar to 90 meV) in Al(0.91)Ga(0.09)N. The formation of these localized states provides a favorable condition for efficient light emission. (C) 2011 Elsevier B.V. All rights reserved.
KeywordPhotoluminescence Raman scattering Pulsed atomic layer epitaxy AlGaN alloys
Funding OrganizationKnowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI10.1016/j.apsusc.2011.05.055
Indexed BySCI
Language英语
Funding ProjectKnowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS Research AreaChemistry ; Materials Science ; Physics
WOS SubjectChemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000291725100070
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/107186
Collection中国科学院金属研究所
Corresponding AuthorPan, Xu
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(20):8718-8721.
APA Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Wang, Zhanguo.(2011).Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy.APPLIED SURFACE SCIENCE,257(20),8718-8721.
MLA Pan, Xu,et al."Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy".APPLIED SURFACE SCIENCE 257.20(2011):8718-8721.
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