Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy

doi:10.1016/j.apsusc.2011.05.055

IMR OpenIR

	Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy
	Pan, Xu 1; Wang, Xiaoliang 1,2; Xiao, Hongling 1,2; Wang, Cuimei 1,2; Yang, Cuibai 1,2; Li, Wei 2; Wang, Weiying 2; Jin, Peng 2; Wang, Zhanguo 1,2
通讯作者	Pan, Xu(xpan@semi.ac.cn)
	2011-08-01
发表期刊	APPLIED SURFACE SCIENCE
ISSN	0169-4332
卷号	257 期号:20 页码:8718-8721
摘要	Al(0.91)Ga(0.09)N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0 0 0 1) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al(0.91)Ga(0.09)N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (similar to 90 meV) in Al(0.91)Ga(0.09)N. The formation of these localized states provides a favorable condition for efficient light emission. (C) 2011 Elsevier B.V. All rights reserved.
关键词	Photoluminescence Raman scattering Pulsed atomic layer epitaxy AlGaN alloys
资助者	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
DOI	10.1016/j.apsusc.2011.05.055
收录类别	SCI
语种	英语
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000291725100070
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/107186
专题	中国科学院金属研究所
通讯作者	Pan, Xu
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(20):8718-8721.
APA	Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Wang, Zhanguo.(2011).Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy.APPLIED SURFACE SCIENCE,257(20),8718-8721.
MLA	Pan, Xu,et al."Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy".APPLIED SURFACE SCIENCE 257.20(2011):8718-8721.