Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy

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	Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy
	Liu, JP; Kong, MY; Li, JP; Liu, XF; Huang, DD; Sun, DZ
通讯作者	Liu, JP(liujp@red.semi.ac.cn)
	1998-10-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	193 期号:4 页码:535-540
摘要	Low temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy have been studied with an emphasis on surface morphology and growth kinetics. It is found that low-temperature growth(<500 degrees C) is in layer-by-layer mode and atomically-smooth surfaces have been obtained in as-grown samples with large Ge composition (>0.5). Ge composition dependence on substrate temperature, Ge cell temperature and disilane flow rate have been investigated. It is found that in low-temperature growth (less than or equal to 500 degrees C) and under large disilane flux, Ge composition increases with the increase of Ge flux and further increase of Ge flux leads to the saturation of Ge composition. Similar compositional dependence has been found at different growth temperatures. The saturated composition increases with the decrease of substrate temperature. The results can be explained if H desorption is assumed to occur from both Si and Ge monohydrides without diffusional exchange and the presence of Ge enhances H desorption on a Si site. (C) 1998 Elsevier Science B.V. All rights reserved.
关键词	Si1-xGex alloys low temperature epitaxy desorption adsorption surface morphology growth kinetics
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000076725000013
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/107908
专题	中国科学院金属研究所
通讯作者	Liu, JP
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, JP,Kong, MY,Li, JP,et al. Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1998,193(4):535-540.
APA	Liu, JP,Kong, MY,Li, JP,Liu, XF,Huang, DD,&Sun, DZ.(1998).Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,193(4),535-540.
MLA	Liu, JP,et al."Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 193.4(1998):535-540.