Growth and transport properties of InAs thin films on GaAs
Zhou, HW; Zeng, YP; Wang, HM; Dong, JR; Zhu, ZP; Pan, L; Kong, MY
Corresponding AuthorZhou, HW()
AbstractHigh-quality InAs epitaxial layers have been grown on (1 0 0) oriented semi-insulating GaAs substrates by MBE. The transport properties of largely lattice mismatched InAs/GaAs heterojunctions have been investigated by Hall effect measurements down to 10 K. In spite of a high dislocation density at the heterointerface, very high electron mobilities are obtained in the InAs thin films. By doping Si into the layer far from the InAs/GaAs interface, we found that the doped samples have higher electron mobility than that of the undoped samples with the same thickness. The mobility demonstrates a pronounced minimum around 300 K for the undoped sample. But for Si-doped samples, no pronounced minimum has been found. Such abnormal behaviours are explained by the parallel conduction from the quasi-bulk carriers and interface carriers. These high-mobility InAs thin films are found to be suitable materials for making Hall elements. (C) 1998 Elsevier Science B.V. All rights reserved.
Indexed BySCI
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000075032500008
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Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorZhou, HW
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Zhou, HW,Zeng, YP,Wang, HM,et al. Growth and transport properties of InAs thin films on GaAs[J]. JOURNAL OF CRYSTAL GROWTH,1998,191(3):361-364.
APA Zhou, HW.,Zeng, YP.,Wang, HM.,Dong, JR.,Zhu, ZP.,...&Kong, MY.(1998).Growth and transport properties of InAs thin films on GaAs.JOURNAL OF CRYSTAL GROWTH,191(3),361-364.
MLA Zhou, HW,et al."Growth and transport properties of InAs thin films on GaAs".JOURNAL OF CRYSTAL GROWTH 191.3(1998):361-364.
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