| Growth and transport properties of InAs thin films on GaAs | |
| Zhou, HW; Zeng, YP; Wang, HM; Dong, JR; Zhu, ZP; Pan, L; Kong, MY | |
| Corresponding Author | Zhou, HW() |
| 1998-07-01 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 191Issue:3Pages:361-364 |
| Abstract | High-quality InAs epitaxial layers have been grown on (1 0 0) oriented semi-insulating GaAs substrates by MBE. The transport properties of largely lattice mismatched InAs/GaAs heterojunctions have been investigated by Hall effect measurements down to 10 K. In spite of a high dislocation density at the heterointerface, very high electron mobilities are obtained in the InAs thin films. By doping Si into the layer far from the InAs/GaAs interface, we found that the doped samples have higher electron mobility than that of the undoped samples with the same thickness. The mobility demonstrates a pronounced minimum around 300 K for the undoped sample. But for Si-doped samples, no pronounced minimum has been found. Such abnormal behaviours are explained by the parallel conduction from the quasi-bulk carriers and interface carriers. These high-mobility InAs thin films are found to be suitable materials for making Hall elements. (C) 1998 Elsevier Science B.V. All rights reserved. |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000075032500008 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/108120 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhou, HW |
| Affiliation | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Zhou, HW,Zeng, YP,Wang, HM,et al. Growth and transport properties of InAs thin films on GaAs[J]. JOURNAL OF CRYSTAL GROWTH,1998,191(3):361-364. |
| APA | Zhou, HW.,Zeng, YP.,Wang, HM.,Dong, JR.,Zhu, ZP.,...&Kong, MY.(1998).Growth and transport properties of InAs thin films on GaAs.JOURNAL OF CRYSTAL GROWTH,191(3),361-364. |
| MLA | Zhou, HW,et al."Growth and transport properties of InAs thin films on GaAs".JOURNAL OF CRYSTAL GROWTH 191.3(1998):361-364. |
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