Growth and transport properties of InAs thin films on GaAs

IMR OpenIR

	Growth and transport properties of InAs thin films on GaAs
	Zhou, HW; Zeng, YP; Wang, HM; Dong, JR; Zhu, ZP; Pan, L; Kong, MY
通讯作者	Zhou, HW()
	1998-07-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	191 期号:3 页码:361-364
摘要	High-quality InAs epitaxial layers have been grown on (1 0 0) oriented semi-insulating GaAs substrates by MBE. The transport properties of largely lattice mismatched InAs/GaAs heterojunctions have been investigated by Hall effect measurements down to 10 K. In spite of a high dislocation density at the heterointerface, very high electron mobilities are obtained in the InAs thin films. By doping Si into the layer far from the InAs/GaAs interface, we found that the doped samples have higher electron mobility than that of the undoped samples with the same thickness. The mobility demonstrates a pronounced minimum around 300 K for the undoped sample. But for Si-doped samples, no pronounced minimum has been found. Such abnormal behaviours are explained by the parallel conduction from the quasi-bulk carriers and interface carriers. These high-mobility InAs thin films are found to be suitable materials for making Hall elements. (C) 1998 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000075032500008
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/108120
专题	中国科学院金属研究所
通讯作者	Zhou, HW
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhou, HW,Zeng, YP,Wang, HM,et al. Growth and transport properties of InAs thin films on GaAs[J]. JOURNAL OF CRYSTAL GROWTH,1998,191(3):361-364.
APA	Zhou, HW.,Zeng, YP.,Wang, HM.,Dong, JR.,Zhu, ZP.,...&Kong, MY.(1998).Growth and transport properties of InAs thin films on GaAs.JOURNAL OF CRYSTAL GROWTH,191(3),361-364.
MLA	Zhou, HW,et al."Growth and transport properties of InAs thin films on GaAs".JOURNAL OF CRYSTAL GROWTH 191.3(1998):361-364.