| Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE | |
| Wang, HM; Fan, TW; Wu, J; Zeng, YP; Dong, JR; Kong, MY | |
| Corresponding Author | Wang, HM() |
| 1998-03-01 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 186Issue:1-2Pages:38-42 |
| Abstract | InAs layers were grown on GaAs by molecular beam epitaxy (MBE) at substrate temperature 450 and 480 degrees C, and the surface morphology was studied with scanning electron microscopy (SEM). We have observed a high density of hexagonal deep pits for samples grown at 450 degrees C, however, the samples grown at 480 degrees C have smooth surface. The difference of morphology can be explained by different migration of cations which is temperature dependent. Cross-sectional transmission electron microscopy (XTEM) studies showed that the growth temperature also affect the distributions of threading dislocations in InAs layers because the motion of dislocations is kinetically limited at lower temperature. (C) 1998 Elsevier Science B.V. All rights reserved. |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000072805600007 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/108255 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wang, HM |
| Affiliation | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Wang, HM,Fan, TW,Wu, J,et al. Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE[J]. JOURNAL OF CRYSTAL GROWTH,1998,186(1-2):38-42. |
| APA | Wang, HM,Fan, TW,Wu, J,Zeng, YP,Dong, JR,&Kong, MY.(1998).Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE.JOURNAL OF CRYSTAL GROWTH,186(1-2),38-42. |
| MLA | Wang, HM,et al."Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE".JOURNAL OF CRYSTAL GROWTH 186.1-2(1998):38-42. |
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