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Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE
Wang, HM; Fan, TW; Wu, J; Zeng, YP; Dong, JR; Kong, MY
Corresponding AuthorWang, HM()
1998-03-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume186Issue:1-2Pages:38-42
AbstractInAs layers were grown on GaAs by molecular beam epitaxy (MBE) at substrate temperature 450 and 480 degrees C, and the surface morphology was studied with scanning electron microscopy (SEM). We have observed a high density of hexagonal deep pits for samples grown at 450 degrees C, however, the samples grown at 480 degrees C have smooth surface. The difference of morphology can be explained by different migration of cations which is temperature dependent. Cross-sectional transmission electron microscopy (XTEM) studies showed that the growth temperature also affect the distributions of threading dislocations in InAs layers because the motion of dislocations is kinetically limited at lower temperature. (C) 1998 Elsevier Science B.V. All rights reserved.
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000072805600007
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/108255
Collection中国科学院金属研究所
Corresponding AuthorWang, HM
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Wang, HM,Fan, TW,Wu, J,et al. Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE[J]. JOURNAL OF CRYSTAL GROWTH,1998,186(1-2):38-42.
APA Wang, HM,Fan, TW,Wu, J,Zeng, YP,Dong, JR,&Kong, MY.(1998).Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE.JOURNAL OF CRYSTAL GROWTH,186(1-2),38-42.
MLA Wang, HM,et al."Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE".JOURNAL OF CRYSTAL GROWTH 186.1-2(1998):38-42.
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