| Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE |
| Wang, HM; Fan, TW; Wu, J; Zeng, YP; Dong, JR; Kong, MY
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| 通讯作者 | Wang, HM()
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| 1998-03-01
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| 发表期刊 | JOURNAL OF CRYSTAL GROWTH
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| ISSN | 0022-0248
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| 卷号 | 186期号:1-2页码:38-42 |
| 摘要 | InAs layers were grown on GaAs by molecular beam epitaxy (MBE) at substrate temperature 450 and 480 degrees C, and the surface morphology was studied with scanning electron microscopy (SEM). We have observed a high density of hexagonal deep pits for samples grown at 450 degrees C, however, the samples grown at 480 degrees C have smooth surface. The difference of morphology can be explained by different migration of cations which is temperature dependent. Cross-sectional transmission electron microscopy (XTEM) studies showed that the growth temperature also affect the distributions of threading dislocations in InAs layers because the motion of dislocations is kinetically limited at lower temperature. (C) 1998 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI
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| 语种 | 英语
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| WOS研究方向 | Crystallography
; Materials Science
; Physics
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| WOS类目 | Crystallography
; Materials Science, Multidisciplinary
; Physics, Applied
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| WOS记录号 | WOS:000072805600007
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| 出版者 | ELSEVIER SCIENCE BV
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/108255
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| 专题 | 中国科学院金属研究所
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| 通讯作者 | Wang, HM |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
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推荐引用方式
GB/T 7714 |
Wang, HM,Fan, TW,Wu, J,et al. Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE[J]. JOURNAL OF CRYSTAL GROWTH,1998,186(1-2):38-42.
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| APA |
Wang, HM,Fan, TW,Wu, J,Zeng, YP,Dong, JR,&Kong, MY.(1998).Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE.JOURNAL OF CRYSTAL GROWTH,186(1-2),38-42.
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| MLA |
Wang, HM,et al."Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE".JOURNAL OF CRYSTAL GROWTH 186.1-2(1998):38-42.
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