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In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique
Zhu, J; Xiao, D; Zhu, J; Zen, J
Corresponding AuthorZhu, J(nic0400@scuu.edu.cn) ; Zhu, J()
1999
Source PublicationCRYSTAL RESEARCH AND TECHNOLOGY
ISSN0232-1300
Volume34Issue:8Pages:989-993
AbstractHighly c-axis oriented La-modified PbTiO3 (PLT) thin films were in situ grown on Pt(100)/MgO(100) and MgO(100) substrates by multi-ion-beam reactive co-sputtering (MIBRECS) technique at the substrate temperature range of 450 degrees C-540 degrees C. The orientation degree alpha of the films is more than 90%. The chemical composition is in good agreement with the designed one and is almost uniform across the surface of the substrates. The remanent polarization (P-r) and coercive field (E-c) were found to be 5.3 mu C/cm(2) and 78 kV/cm, respectively.
Keywordferroelectric thin film sputtering (Pb,La)TiO3
Indexed BySCI
Language英语
WOS Research AreaCrystallography
WOS SubjectCrystallography
WOS IDWOS:000083136900007
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/108915
Collection中国科学院金属研究所
Corresponding AuthorZhu, J; Zhu, J
Affiliation1.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
2.Acad Sinica, Int Ctr Mat Phys, Shengyang, Peoples R China
3.Sichuan Univ, Ctr Anal & Test, Chengdu 610064, Peoples R China
Recommended Citation
GB/T 7714
Zhu, J,Xiao, D,Zhu, J,et al. In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique[J]. CRYSTAL RESEARCH AND TECHNOLOGY,1999,34(8):989-993.
APA Zhu, J,Xiao, D,Zhu, J,&Zen, J.(1999).In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique.CRYSTAL RESEARCH AND TECHNOLOGY,34(8),989-993.
MLA Zhu, J,et al."In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique".CRYSTAL RESEARCH AND TECHNOLOGY 34.8(1999):989-993.
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