Evolution of height distribution of Ge islands on Si(1 0 0)

IMR OpenIR

	Evolution of height distribution of Ge islands on Si(1 0 0)
	Liu, JP; Gong, Q; Huang, DD; Li, JP; Sun, DZ; Kong, MY
通讯作者	Liu, JP()
	1999-04-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	200 期号:3-4 页码:617-620
摘要	Evolution of the height distribution of Ge islands during in situ annealing of Ge films on Si(1 0 0) has been studied. Island height is found to have a bimodal distribution. The standard deviation of the island height divided by the mean island height, for the mode of larger island size is more than that for the other mode. We suggest that the presence of Ehrlich-Schwoebel barriers, combined with the misfit strain, can lead to the bimodal distribution of island size, the mode of larger island size having narrower base size distribution, but wider height distribution for Ge islands on Si(1 0 0). The bimodal distribution of island size could be stable due to kinetics without necessarily regarding it as minimum-energy configuration. (C) 1999 Elsevier Science B.V. All rights reserved.
关键词	Ge islands Ge films bimodal distribution Ehrlich-Schwoebel barriers
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000079859800040
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/108958
专题	中国科学院金属研究所
通讯作者	Liu, JP
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, JP,Gong, Q,Huang, DD,et al. Evolution of height distribution of Ge islands on Si(1 0 0)[J]. JOURNAL OF CRYSTAL GROWTH,1999,200(3-4):617-620.
APA	Liu, JP,Gong, Q,Huang, DD,Li, JP,Sun, DZ,&Kong, MY.(1999).Evolution of height distribution of Ge islands on Si(1 0 0).JOURNAL OF CRYSTAL GROWTH,200(3-4),617-620.
MLA	Liu, JP,et al."Evolution of height distribution of Ge islands on Si(1 0 0)".JOURNAL OF CRYSTAL GROWTH 200.3-4(1999):617-620.