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Evolution of height distribution of Ge islands on Si(1 0 0)
Liu, JP; Gong, Q; Huang, DD; Li, JP; Sun, DZ; Kong, MY
Corresponding AuthorLiu, JP()
1999-04-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume200Issue:3-4Pages:617-620
AbstractEvolution of the height distribution of Ge islands during in situ annealing of Ge films on Si(1 0 0) has been studied. Island height is found to have a bimodal distribution. The standard deviation of the island height divided by the mean island height, for the mode of larger island size is more than that for the other mode. We suggest that the presence of Ehrlich-Schwoebel barriers, combined with the misfit strain, can lead to the bimodal distribution of island size, the mode of larger island size having narrower base size distribution, but wider height distribution for Ge islands on Si(1 0 0). The bimodal distribution of island size could be stable due to kinetics without necessarily regarding it as minimum-energy configuration. (C) 1999 Elsevier Science B.V. All rights reserved.
KeywordGe islands Ge films bimodal distribution Ehrlich-Schwoebel barriers
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000079859800040
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/108958
Collection中国科学院金属研究所
Corresponding AuthorLiu, JP
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, JP,Gong, Q,Huang, DD,et al. Evolution of height distribution of Ge islands on Si(1 0 0)[J]. JOURNAL OF CRYSTAL GROWTH,1999,200(3-4):617-620.
APA Liu, JP,Gong, Q,Huang, DD,Li, JP,Sun, DZ,&Kong, MY.(1999).Evolution of height distribution of Ge islands on Si(1 0 0).JOURNAL OF CRYSTAL GROWTH,200(3-4),617-620.
MLA Liu, JP,et al."Evolution of height distribution of Ge islands on Si(1 0 0)".JOURNAL OF CRYSTAL GROWTH 200.3-4(1999):617-620.
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