| Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing | |
| Liu, JP; Kong, MY; Liu, XF; Li, JP; Huang, DD; Li, LX; Sun, DZ | |
| Corresponding Author | Kong, MY() |
| 1999-05-01 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 201Pages:556-559 |
| Abstract | Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved. |
| Keyword | strain relaxation Si SiGe interdiffusion morphological evolution |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000080406000119 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/109916 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Kong, MY |
| Affiliation | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Liu, JP,Kong, MY,Liu, XF,et al. Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing[J]. JOURNAL OF CRYSTAL GROWTH,1999,201:556-559. |
| APA | Liu, JP.,Kong, MY.,Liu, XF.,Li, JP.,Huang, DD.,...&Sun, DZ.(1999).Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing.JOURNAL OF CRYSTAL GROWTH,201,556-559. |
| MLA | Liu, JP,et al."Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing".JOURNAL OF CRYSTAL GROWTH 201(1999):556-559. |
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