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Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing
Liu, JP; Kong, MY; Liu, XF; Li, JP; Huang, DD; Li, LX; Sun, DZ
Corresponding AuthorKong, MY()
1999-05-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume201Pages:556-559
AbstractStrain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.
Keywordstrain relaxation Si SiGe interdiffusion morphological evolution
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000080406000119
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/109916
Collection中国科学院金属研究所
Corresponding AuthorKong, MY
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, JP,Kong, MY,Liu, XF,et al. Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing[J]. JOURNAL OF CRYSTAL GROWTH,1999,201:556-559.
APA Liu, JP.,Kong, MY.,Liu, XF.,Li, JP.,Huang, DD.,...&Sun, DZ.(1999).Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing.JOURNAL OF CRYSTAL GROWTH,201,556-559.
MLA Liu, JP,et al."Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing".JOURNAL OF CRYSTAL GROWTH 201(1999):556-559.
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