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High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)
Liu, JP; Huang, DD; Li, JP; Sun, DZ; Kong, MY
Corresponding AuthorLiu, JP()
1999-04-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume200Issue:3-4Pages:613-616
AbstractUniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
KeywordSi low-temperature epitaxy P doping surface morphology morphological evolution
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000079859800039
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/110002
Collection中国科学院金属研究所
Corresponding AuthorLiu, JP
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, JP,Huang, DD,Li, JP,et al. High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)[J]. JOURNAL OF CRYSTAL GROWTH,1999,200(3-4):613-616.
APA Liu, JP,Huang, DD,Li, JP,Sun, DZ,&Kong, MY.(1999).High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE).JOURNAL OF CRYSTAL GROWTH,200(3-4),613-616.
MLA Liu, JP,et al."High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)".JOURNAL OF CRYSTAL GROWTH 200.3-4(1999):613-616.
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