High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

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	High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)
	Liu, JP; Huang, DD; Li, JP; Sun, DZ; Kong, MY
通讯作者	Liu, JP()
	1999-04-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	200 期号:3-4 页码:613-616
摘要	Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
关键词	Si low-temperature epitaxy P doping surface morphology morphological evolution
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000079859800039
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/110002
专题	中国科学院金属研究所
通讯作者	Liu, JP
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, JP,Huang, DD,Li, JP,et al. High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)[J]. JOURNAL OF CRYSTAL GROWTH,1999,200(3-4):613-616.
APA	Liu, JP,Huang, DD,Li, JP,Sun, DZ,&Kong, MY.(1999).High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE).JOURNAL OF CRYSTAL GROWTH,200(3-4),613-616.
MLA	Liu, JP,et al."High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)".JOURNAL OF CRYSTAL GROWTH 200.3-4(1999):613-616.