| X-ray photoelectron spectroscopy studies of ITO thin films |
| Chen, M; Pei, ZL; Bai, XD; Huang, RF; Wen, LS
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| 通讯作者 | Chen, M()
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| 2000-02-01
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| 发表期刊 | JOURNAL OF INORGANIC MATERIALS
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| ISSN | 1000-324X
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| 卷号 | 15期号:1页码:188-192 |
| 摘要 | The chemical states of In, Sn and O in Sn-dopcd In2O3 films were investigated by using X-ray photoelectron spectroscopy. The results indicate that Sn and In respectively exist in a same chemical state for both as-deposited and post-annealed films. Two types of O2- ions, O-I and O-II, can be distinguished by Gaussian simulation. OI has a binding energy of 529.90+/-0.30 eV which is in oxygen sufficient region, and O-II has a binding energy of 531.40+/-0.2 eV which is in oxygen deficient regions. Oxygen deficient regions mainly exist in the surface layer. |
| 关键词 | chemical state
XPS
Gaussian simulation
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| 收录类别 | SCI
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| 语种 | 英语
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| WOS研究方向 | Materials Science
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| WOS类目 | Materials Science, Ceramics
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| WOS记录号 | WOS:000086464400034
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| 出版者 | SCIENCE PRESS
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/110461
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| 专题 | 中国科学院金属研究所
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| 通讯作者 | Chen, M |
| 作者单位 | Chinese Acad Sci, Inst Met Res, Shenyang 110015, Peoples R China
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推荐引用方式
GB/T 7714 |
Chen, M,Pei, ZL,Bai, XD,et al. X-ray photoelectron spectroscopy studies of ITO thin films[J]. JOURNAL OF INORGANIC MATERIALS,2000,15(1):188-192.
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| APA |
Chen, M,Pei, ZL,Bai, XD,Huang, RF,&Wen, LS.(2000).X-ray photoelectron spectroscopy studies of ITO thin films.JOURNAL OF INORGANIC MATERIALS,15(1),188-192.
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| MLA |
Chen, M,et al."X-ray photoelectron spectroscopy studies of ITO thin films".JOURNAL OF INORGANIC MATERIALS 15.1(2000):188-192.
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