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The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy
Gao, F; Huang, DD; Li, JP; Lin, YX; Kong, MY; Li, JM; Zeng, YP; Lin, LY
Corresponding AuthorGao, F()
2000-12-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume220Issue:4Pages:457-460
AbstractThree n-p-n Si/SiGe/Si heterostructures with different layer thickness and doping concentration have been grown by a home-made gas source molecular-beam epitaxy (GSMBE) system using phosphine (PH3) and diborane (B2H6) as n-and p-type in situ doping sources, respectively. Heterojunction bipolar transistors (HBTs) have been fabricated using these structures and a current gain of 40 at 300 K and 62 at 77 K have been obtained. The influence of thickness and doping concentration of the deposited layers on the current gain of the HBTs is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
KeywordGSMBE SiGe alloy doping SIMS HBT current gain
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000165957500017
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/110612
Collection中国科学院金属研究所
Corresponding AuthorGao, F
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Gao, F,Huang, DD,Li, JP,et al. The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,220(4):457-460.
APA Gao, F.,Huang, DD.,Li, JP.,Lin, YX.,Kong, MY.,...&Lin, LY.(2000).The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,220(4),457-460.
MLA Gao, F,et al."The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 220.4(2000):457-460.
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