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Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy
Gao, F; Huang, DD; Li, JP; Lin, YX; Kong, MY; Sun, DZ; Li, JM; Lin, LY
Corresponding AuthorGao, F()
2000-12-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume220Issue:4Pages:461-465
AbstractAs reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved.
KeywordSi growth rate P doping PH3 flow rate P segregation GSMBE
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000165957500018
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/111341
Collection中国科学院金属研究所
Corresponding AuthorGao, F
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Gao, F,Huang, DD,Li, JP,et al. Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,220(4):461-465.
APA Gao, F.,Huang, DD.,Li, JP.,Lin, YX.,Kong, MY.,...&Lin, LY.(2000).Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,220(4),461-465.
MLA Gao, F,et al."Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 220.4(2000):461-465.
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