| Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy | |
| Gao, F; Huang, DD; Li, JP; Lin, YX; Kong, MY; Sun, DZ; Li, JM; Lin, LY | |
| Corresponding Author | Gao, F() |
| 2000-12-01 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 220Issue:4Pages:461-465 |
| Abstract | As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved. |
| Keyword | Si growth rate P doping PH3 flow rate P segregation GSMBE |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000165957500018 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/111341 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Gao, F |
| Affiliation | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Gao, F,Huang, DD,Li, JP,et al. Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,220(4):461-465. |
| APA | Gao, F.,Huang, DD.,Li, JP.,Lin, YX.,Kong, MY.,...&Lin, LY.(2000).Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,220(4),461-465. |
| MLA | Gao, F,et al."Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 220.4(2000):461-465. |
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