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Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy
Liu, JP; Huang, DD; Li, JP; Lin, YX; Sun, DZ; Kong, MY
Corresponding AuthorHuang, DD()
2000
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume208Issue:1-4Pages:322-326
AbstractIn situ doping for growth of n-p-n Si/SiGe/Si heterojuction bipolar transistor (HBT) structural materials in Si gas source molecular beam epitaxy is investigated. We studied high n-type doping kinetics in Si growth using disilane and phosphine, and p-type doping in SiGe growth using disilane, soild-Ge, and diborane with an emphasis on the effect of Ge on B incorporation. Based on these results, in situ growth of n-p-n Si/SiGe/Si HBT device structure is demonstrated with designed structural and carrier profiles, as verified from characterizations by X-ray diffraction, and spreading resistance profiling analysis. (C) 2000 Elsevier Science B.V. All rights reserved.
Keywordn-type doping p-type doping Si/SiGe HBT GSMBE
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000084486400046
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/111497
Collection中国科学院金属研究所
Corresponding AuthorHuang, DD
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, JP,Huang, DD,Li, JP,et al. Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,208(1-4):322-326.
APA Liu, JP,Huang, DD,Li, JP,Lin, YX,Sun, DZ,&Kong, MY.(2000).Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,208(1-4),322-326.
MLA Liu, JP,et al."Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 208.1-4(2000):322-326.
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