| Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy | |
| Liu, JP; Huang, DD; Li, JP; Lin, YX; Sun, DZ; Kong, MY | |
| Corresponding Author | Huang, DD() |
| 2000 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 208Issue:1-4Pages:322-326 |
| Abstract | In situ doping for growth of n-p-n Si/SiGe/Si heterojuction bipolar transistor (HBT) structural materials in Si gas source molecular beam epitaxy is investigated. We studied high n-type doping kinetics in Si growth using disilane and phosphine, and p-type doping in SiGe growth using disilane, soild-Ge, and diborane with an emphasis on the effect of Ge on B incorporation. Based on these results, in situ growth of n-p-n Si/SiGe/Si HBT device structure is demonstrated with designed structural and carrier profiles, as verified from characterizations by X-ray diffraction, and spreading resistance profiling analysis. (C) 2000 Elsevier Science B.V. All rights reserved. |
| Keyword | n-type doping p-type doping Si/SiGe HBT GSMBE |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000084486400046 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/111497 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Huang, DD |
| Affiliation | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Liu, JP,Huang, DD,Li, JP,et al. Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,208(1-4):322-326. |
| APA | Liu, JP,Huang, DD,Li, JP,Lin, YX,Sun, DZ,&Kong, MY.(2000).Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,208(1-4),322-326. |
| MLA | Liu, JP,et al."Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 208.1-4(2000):322-326. |
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