Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy

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	Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy
	Liu, JP; Huang, DD; Li, JP; Lin, YX; Sun, DZ; Kong, MY
通讯作者	Huang, DD()
	2000
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	208 期号:1-4 页码:322-326
摘要	In situ doping for growth of n-p-n Si/SiGe/Si heterojuction bipolar transistor (HBT) structural materials in Si gas source molecular beam epitaxy is investigated. We studied high n-type doping kinetics in Si growth using disilane and phosphine, and p-type doping in SiGe growth using disilane, soild-Ge, and diborane with an emphasis on the effect of Ge on B incorporation. Based on these results, in situ growth of n-p-n Si/SiGe/Si HBT device structure is demonstrated with designed structural and carrier profiles, as verified from characterizations by X-ray diffraction, and spreading resistance profiling analysis. (C) 2000 Elsevier Science B.V. All rights reserved.
关键词	n-type doping p-type doping Si/SiGe HBT GSMBE
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000084486400046
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/111497
专题	中国科学院金属研究所
通讯作者	Huang, DD
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, JP,Huang, DD,Li, JP,et al. Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2000,208(1-4):322-326.
APA	Liu, JP,Huang, DD,Li, JP,Lin, YX,Sun, DZ,&Kong, MY.(2000).Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,208(1-4),322-326.
MLA	Liu, JP,et al."Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 208.1-4(2000):322-326.