Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

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	Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
	Gao, F; Lin, YX; Huang, DD; Li, JP; Sun, DZ; Kong, MY; Zeng, YP; Li, JM; Lin, LY
Corresponding Author	Gao, F()
	2001-07-01
Source Publication	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
Volume	227 Pages:766-769
Abstract	The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved.
Keyword	annealing molecular beam epitaxy germanium silicon alloys semiconducting materials
Indexed By	SCI
Language	英语
WOS Research Area	Crystallography ; Materials Science ; Physics
WOS Subject	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS ID	WOS:000169557600148
Publisher	ELSEVIER SCIENCE BV
Citation statistics	Cited Times:2[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.imr.ac.cn/handle/321006/111739
Collection	中国科学院金属研究所
Corresponding Author	Gao, F
Affiliation	Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 10083, Peoples R China
Recommended Citation GB/T 7714	Gao, F,Lin, YX,Huang, DD,et al. Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:766-769.
APA	Gao, F.,Lin, YX.,Huang, DD.,Li, JP.,Sun, DZ.,...&Lin, LY.(2001).Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability.JOURNAL OF CRYSTAL GROWTH,227,766-769.
MLA	Gao, F,et al."Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability".JOURNAL OF CRYSTAL GROWTH 227(2001):766-769.

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