Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

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	Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
	Gao, F; Lin, YX; Huang, DD; Li, JP; Sun, DZ; Kong, MY; Zeng, YP; Li, JM; Lin, LY
通讯作者	Gao, F()
	2001-07-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	227 页码:766-769
摘要	The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词	annealing molecular beam epitaxy germanium silicon alloys semiconducting materials
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000169557600148
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/111739
专题	中国科学院金属研究所
通讯作者	Gao, F
作者单位	Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 10083, Peoples R China
推荐引用方式 GB/T 7714	Gao, F,Lin, YX,Huang, DD,et al. Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:766-769.
APA	Gao, F.,Lin, YX.,Huang, DD.,Li, JP.,Sun, DZ.,...&Lin, LY.(2001).Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability.JOURNAL OF CRYSTAL GROWTH,227,766-769.
MLA	Gao, F,et al."Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability".JOURNAL OF CRYSTAL GROWTH 227(2001):766-769.