| The structural, dielectric and ferroelectric properties of Bi3.5La0.5Ti3O12 thin films prepared by sol-gel process | |
| Zhu, JG; Yu, C; Xiao, DQ; Shen, L; Yuan, XW; Zhu, JL; Yue, X | |
| Corresponding Author | Zhu, JG() |
| 2001 | |
| Source Publication | FERROELECTRICS
 |
| ISSN | 0015-0193 |
| Volume | 260Issue:1-4Pages:499-504 |
| Abstract | Lanthanum doped bismuth titanate (Bi3.5La0.5Ti3O12, BLT-5) thin films were prepared by sol-gel method. Polycrystalline BLT-5 thin films could be obtained at annealing temperatures of 600similar to650 degreesC. The typical coercive electric field (E) and remnant polarization (P,) for the BLT-5 thin film annealed at 650degreesC were E-C=67 kV/cm, P-r =11.2 mu C/cm(2), respectively. BLT-5 thin film shows good fatigue-free property. |
| Keyword | bismuth titanate lanthanum doped sol-gel |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Materials Science ; Physics |
| WOS Subject | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| WOS ID | WOS:000177215300027 |
| Publisher | TAYLOR & FRANCIS LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/112007 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhu, JG |
| Affiliation | 1.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China 2.Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China |
| Recommended Citation GB/T 7714 | Zhu, JG,Yu, C,Xiao, DQ,et al. The structural, dielectric and ferroelectric properties of Bi3.5La0.5Ti3O12 thin films prepared by sol-gel process[J]. FERROELECTRICS,2001,260(1-4):499-504. |
| APA | Zhu, JG.,Yu, C.,Xiao, DQ.,Shen, L.,Yuan, XW.,...&Yue, X.(2001).The structural, dielectric and ferroelectric properties of Bi3.5La0.5Ti3O12 thin films prepared by sol-gel process.FERROELECTRICS,260(1-4),499-504. |
| MLA | Zhu, JG,et al."The structural, dielectric and ferroelectric properties of Bi3.5La0.5Ti3O12 thin films prepared by sol-gel process".FERROELECTRICS 260.1-4(2001):499-504. |
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