The structural, dielectric and ferroelectric properties of Bi3.5La0.5Ti3O12 thin films prepared by sol-gel process

IMR OpenIR

	The structural, dielectric and ferroelectric properties of Bi3.5La0.5Ti3O12 thin films prepared by sol-gel process
	Zhu, JG ; Yu, C ; Xiao, DQ ; Shen, L ; Yuan, XW ; Zhu, JL ; Yue, X
通讯作者	Zhu, JG()
	2001
发表期刊	FERROELECTRICS
ISSN	0015-0193
卷号	260 期号:1-4 页码:499-504
摘要	Lanthanum doped bismuth titanate (Bi3.5La0.5Ti3O12, BLT-5) thin films were prepared by sol-gel method. Polycrystalline BLT-5 thin films could be obtained at annealing temperatures of 600similar to650 degreesC. The typical coercive electric field (E) and remnant polarization (P,) for the BLT-5 thin film annealed at 650degreesC were E-C=67 kV/cm, P-r =11.2 mu C/cm(2), respectively. BLT-5 thin film shows good fatigue-free property.
关键词	bismuth titanate lanthanum doped sol-gel
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000177215300027
出版者	TAYLOR & FRANCIS LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/112007
专题	中国科学院金属研究所
通讯作者	Zhu, JG
作者单位	1.Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China 2.Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
推荐引用方式 GB/T 7714	Zhu, JG,Yu, C,Xiao, DQ,et al. The structural, dielectric and ferroelectric properties of Bi3.5La0.5Ti3O12 thin films prepared by sol-gel process[J]. FERROELECTRICS,2001,260(1-4):499-504.
APA	Zhu, JG.,Yu, C.,Xiao, DQ.,Shen, L.,Yuan, XW.,...&Yue, X.(2001).The structural, dielectric and ferroelectric properties of Bi3.5La0.5Ti3O12 thin films prepared by sol-gel process.FERROELECTRICS,260(1-4),499-504.
MLA	Zhu, JG,et al."The structural, dielectric and ferroelectric properties of Bi3.5La0.5Ti3O12 thin films prepared by sol-gel process".FERROELECTRICS 260.1-4(2001):499-504.