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Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy
Gao, F; Huang, DD; Li, JP; Kong, MY; Sun, DZ; Li, JM; Zeng, YP; Lin, LY
Corresponding AuthorGao, F()
2001-03-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume223Issue:4Pages:489-493
AbstractN-p-n Si/SiGe/Si heterostructure has been grown by a disilane (Si2H6) gas and Ge solid sources molecular beam epitaxy system using phosphine (PH3) and diborane (B2H6) as n- and p-type in situ doping sources, respectively. X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) measurements show that the grown heterostructure has a good quality, the boron doping is confined to the SiGe base layer, and the Ge has a trapezoidal profile. Postgrowth P implantation was performed to prepare a good ohmic contact to the emitter. Heterojunction bipolar transistor (HBT) has been fabricated using the grown heterostructure and a common-emitter current gain of 75 and a cut-off frequency of 20 GHz at 300 K have been obtained. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywordmolecular beam epitaxy semiconducting gegermanium semiconducting silicon bipolar transistors heterojunction semiconductor devices
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000167740900007
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/112463
Collection中国科学院金属研究所
Corresponding AuthorGao, F
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Gao, F,Huang, DD,Li, JP,et al. Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2001,223(4):489-493.
APA Gao, F.,Huang, DD.,Li, JP.,Kong, MY.,Sun, DZ.,...&Lin, LY.(2001).Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,223(4),489-493.
MLA Gao, F,et al."Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 223.4(2001):489-493.
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