Changing the size and shape of Ge island by chemical etching

IMR OpenIR

	Changing the size and shape of Ge island by chemical etching
	Gao, F ; Huang, CJ ; Huang, DD ; Li, JP ; Sun, DZ ; Kong, MY ; Zeng, YP ; Li, JM ; Lin, LY
通讯作者	Gao, F()
	2001-09-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	231 期号:1-2 页码:17-21
摘要	Self-assembled Ge islands were grown on Si (1 0 0) substrate by Si2H6-Ge molecular beam epitaxy. Subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of Ge islands change with etching time. In addition, the photoluminescence from the etched Ge islands shifted to the higher energy side compared to that of the as-deposited Ge islands. Our results demonstrated that chemical etching can be a way to change the size and shape of the as-deposited islands as well as their luminescence property. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词	atomic force microscopy etching nanostructures molecular beam epitaxy semiconducting germanium semiconducting silicon
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000170122600004
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/112917
专题	中国科学院金属研究所
通讯作者	Gao, F
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Gao, F,Huang, CJ,Huang, DD,et al. Changing the size and shape of Ge island by chemical etching[J]. JOURNAL OF CRYSTAL GROWTH,2001,231(1-2):17-21.
APA	Gao, F.,Huang, CJ.,Huang, DD.,Li, JP.,Sun, DZ.,...&Lin, LY.(2001).Changing the size and shape of Ge island by chemical etching.JOURNAL OF CRYSTAL GROWTH,231(1-2),17-21.
MLA	Gao, F,et al."Changing the size and shape of Ge island by chemical etching".JOURNAL OF CRYSTAL GROWTH 231.1-2(2001):17-21.