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Structural, electrical, and optical properties of transparent conductive oxide ZnO : Al films prepared by dc magnetron reactive sputtering
Chen, M; Pei, ZL; Wang, X; Sung, C; Wen, LS
Corresponding AuthorChen, M()
2001-05-01
Source PublicationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN0734-2101
Volume19Issue:3Pages:963-970
AbstractZnO:Al(ZaO) films were deposited on quartz substrates by de magnetron reactive sputtering from a Zn target mixed with Al. The effect of oxygen flow rate, target to substrate distance, substrate temperature, and Al doping content on the structural, electrical and optical properties of ZAO were investigated. It was observed that the (002) peak position of all films shifts to lower angle comparable to that of bulk ZnO due to the residual stress change with deposition parameters. X-ray photoemission spectroscopy was introduced to analyze the chemical state of Al on the film surface and the results show Al enrichment. The dependences of electrical properties such as resistivity, carrier concentration and Wall mobility on substrate temperature, and Al doping content were measured. The visible transmittance of above 80% and infrared reflectance of above 80% were obtained. The minimum resistivity is 4.23 X 10(-4) Omega cm with the carrier concentration of 9.21 X 10(20) cm(-3) and Hall mobility of 16.0 cm(2) v(1) s(-1). The optical band gap was observed to increase with increasing carrier concentration. The probable mechanisms are discussed. (C) 2001 American Vacuum Society.
Indexed BySCI
Language英语
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Coatings & Films ; Physics, Applied
WOS IDWOS:000168922300038
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:165[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/113356
Collection中国科学院金属研究所
Corresponding AuthorChen, M
Affiliation1.Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
2.Chinese Acad Sci, Met Res Inst, Shenyang 110015, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
4.Chinese Acad Sci, Met Res Inst, Shenyang 110015, Peoples R China
Recommended Citation
GB/T 7714
Chen, M,Pei, ZL,Wang, X,et al. Structural, electrical, and optical properties of transparent conductive oxide ZnO : Al films prepared by dc magnetron reactive sputtering[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,2001,19(3):963-970.
APA Chen, M,Pei, ZL,Wang, X,Sung, C,&Wen, LS.(2001).Structural, electrical, and optical properties of transparent conductive oxide ZnO : Al films prepared by dc magnetron reactive sputtering.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,19(3),963-970.
MLA Chen, M,et al."Structural, electrical, and optical properties of transparent conductive oxide ZnO : Al films prepared by dc magnetron reactive sputtering".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 19.3(2001):963-970.
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