Structural, electrical, and optical properties of transparent conductive oxide ZnO : Al films prepared by dc magnetron reactive sputtering

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	Structural, electrical, and optical properties of transparent conductive oxide ZnO : Al films prepared by dc magnetron reactive sputtering
	Chen, M ; Pei, ZL ; Wang, X ; Sung, C ; Wen, LS
通讯作者	Chen, M()
	2001-05-01
发表期刊	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN	0734-2101
卷号	19 期号:3 页码:963-970
摘要	ZnO:Al(ZaO) films were deposited on quartz substrates by de magnetron reactive sputtering from a Zn target mixed with Al. The effect of oxygen flow rate, target to substrate distance, substrate temperature, and Al doping content on the structural, electrical and optical properties of ZAO were investigated. It was observed that the (002) peak position of all films shifts to lower angle comparable to that of bulk ZnO due to the residual stress change with deposition parameters. X-ray photoemission spectroscopy was introduced to analyze the chemical state of Al on the film surface and the results show Al enrichment. The dependences of electrical properties such as resistivity, carrier concentration and Wall mobility on substrate temperature, and Al doping content were measured. The visible transmittance of above 80% and infrared reflectance of above 80% were obtained. The minimum resistivity is 4.23 X 10(-4) Omega cm with the carrier concentration of 9.21 X 10(20) cm(-3) and Hall mobility of 16.0 cm(2) v(1) s(-1). The optical band gap was observed to increase with increasing carrier concentration. The probable mechanisms are discussed. (C) 2001 American Vacuum Society.
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Coatings & Films ; Physics, Applied
WOS记录号	WOS:000168922300038
出版者	AMER INST PHYSICS
引用统计	被引频次：176[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/113356
专题	中国科学院金属研究所
通讯作者	Chen, M
作者单位	1.Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Met Res Inst, Shenyang 110015, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China 4.Chinese Acad Sci, Met Res Inst, Shenyang 110015, Peoples R China
推荐引用方式 GB/T 7714	Chen, M,Pei, ZL,Wang, X,et al. Structural, electrical, and optical properties of transparent conductive oxide ZnO : Al films prepared by dc magnetron reactive sputtering[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,2001,19(3):963-970.
APA	Chen, M,Pei, ZL,Wang, X,Sung, C,&Wen, LS.(2001).Structural, electrical, and optical properties of transparent conductive oxide ZnO : Al films prepared by dc magnetron reactive sputtering.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,19(3),963-970.
MLA	Chen, M,et al."Structural, electrical, and optical properties of transparent conductive oxide ZnO : Al films prepared by dc magnetron reactive sputtering".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 19.3(2001):963-970.