| Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon | |
| Tan, LW; Wang, J; Wang, QY; Yu, YH; Lin, LY | |
| Corresponding Author | Tan, LW() |
| 2002-11-20 | |
| Source Publication | INTERNATIONAL JOURNAL OF MODERN PHYSICS B
 |
| ISSN | 0217-9792 |
| Volume | 16Issue:28-29Pages:4302-4305 |
| Abstract | The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V. |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical |
| WOS ID | WOS:000179800800027 |
| Publisher | WORLD SCIENTIFIC PUBL CO PTE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/114400 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Tan, LW |
| Affiliation | Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Tan, LW,Wang, J,Wang, QY,et al. Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2002,16(28-29):4302-4305. |
| APA | Tan, LW,Wang, J,Wang, QY,Yu, YH,&Lin, LY.(2002).Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,16(28-29),4302-4305. |
| MLA | Tan, LW,et al."Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 16.28-29(2002):4302-4305. |
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