Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

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	Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon
	Tan, LW; Wang, J; Wang, QY; Yu, YH; Lin, LY
通讯作者	Tan, LW()
	2002-11-20
发表期刊	INTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN	0217-9792
卷号	16 期号:28-29 页码:4302-4305
摘要	The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical
WOS记录号	WOS:000179800800027
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/114400
专题	中国科学院金属研究所
通讯作者	Tan, LW
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Tan, LW,Wang, J,Wang, QY,et al. Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2002,16(28-29):4302-4305.
APA	Tan, LW,Wang, J,Wang, QY,Yu, YH,&Lin, LY.(2002).Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,16(28-29),4302-4305.
MLA	Tan, LW,et al."Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 16.28-29(2002):4302-4305.