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Microstructural study on multilayer [FeTaN/TaN](5) films
Zhan, Q; Yu, R; He, LL; Li, DX; Nie, HB; Ong, C
Corresponding AuthorZhan, Q()
2003-08-01
Source PublicationMATERIALS LETTERS
ISSN0167-577X
Volume57Issue:24-25Pages:3904-3909
AbstractThe microstructure of [FeTaN/TaN](5) multilayer films has been investigated by transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM) in cross section and plan view. Each layer shows a small surface roughening less than 1 nm. The FeTaN layers are composed of b.c.c. Fe with Ta incorporated substitutionally and N interstitially, denoted as Fe(Ta,N); while the TaN layers mainly consist of f.c.c. TaN phase. A [110] texture of Fe(Ta,N) has been formed in the FeTaN layers. The columnar grain structure is a typical feature in FeTaN layers. (C) 2003 Elsevier Science B.V. All rights reserved.
Keywordmicrostructure thin films magnetic materials transmission electron microscopy (TEM) sputtering
DOI10.1016/S0167-577X(03)00238-6
Indexed BySCI
Language英语
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000184846900035
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/116597
Collection中国科学院金属研究所
Corresponding AuthorZhan, Q
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
3.Natl Univ Singapore, Ctr Superconducting & Magnet Mat, Singapore 119260, Singapore
Recommended Citation
GB/T 7714
Zhan, Q,Yu, R,He, LL,et al. Microstructural study on multilayer [FeTaN/TaN](5) films[J]. MATERIALS LETTERS,2003,57(24-25):3904-3909.
APA Zhan, Q,Yu, R,He, LL,Li, DX,Nie, HB,&Ong, C.(2003).Microstructural study on multilayer [FeTaN/TaN](5) films.MATERIALS LETTERS,57(24-25),3904-3909.
MLA Zhan, Q,et al."Microstructural study on multilayer [FeTaN/TaN](5) films".MATERIALS LETTERS 57.24-25(2003):3904-3909.
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