Macro-particle reduction mechanism in biased arc ion plating of TiN | |
Huang, MD; Lin, GQ; Zhao, YH; Sun, C; Wen, LS; Dong, CA | |
通讯作者 | Dong, CA() |
2003-11-01 | |
发表期刊 | SURFACE & COATINGS TECHNOLOGY
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ISSN | 0257-8972 |
卷号 | 176期号:1页码:109-114 |
摘要 | The mechanism of macro-particles (MPs) contamination in arc ion plating is investigated on TiN films under different biases. The effect of the biases is analyzed from the viewpoint of plasma physics. It is shown that the negatively charged MPs are affected by the biases through a repulsive force from the negatively biased substrate. They are more easily charged by electrons under pulsed biases because they repeatedly move in and out of the oscillating plasma sheath. In d.c. bias modes, the plasma sheath is stable and its charging effect is weak. Thus the repulsive force from the substrate under the pulsed biases is higher than that under the d.c. ones, and therefore, MPs are significantly reduced. (C) 2003 Elsevier B.V. All rights reserved. |
关键词 | arc evaporation ion plating pulsed TiN macro-particles |
DOI | 10.1016/S0257-8972(03)00017-3 |
收录类别 | SCI |
语种 | 英语 |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Coatings & Films ; Physics, Applied |
WOS记录号 | WOS:000186472800014 |
出版者 | ELSEVIER SCIENCE SA |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/116753 |
专题 | 中国科学院金属研究所 |
通讯作者 | Dong, CA |
作者单位 | 1.Dalian Univ Technol, Dept Mat Engn, State Key Lab Mat Modificat, Dalian 116204, Peoples R China 2.Chinese Acad Sci, Met Res Inst, Shenyang 110016, Peoples R China |
推荐引用方式 GB/T 7714 | Huang, MD,Lin, GQ,Zhao, YH,et al. Macro-particle reduction mechanism in biased arc ion plating of TiN[J]. SURFACE & COATINGS TECHNOLOGY,2003,176(1):109-114. |
APA | Huang, MD,Lin, GQ,Zhao, YH,Sun, C,Wen, LS,&Dong, CA.(2003).Macro-particle reduction mechanism in biased arc ion plating of TiN.SURFACE & COATINGS TECHNOLOGY,176(1),109-114. |
MLA | Huang, MD,et al."Macro-particle reduction mechanism in biased arc ion plating of TiN".SURFACE & COATINGS TECHNOLOGY 176.1(2003):109-114. |
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