| Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si | |
| Tan, LW; Wang, QY; Wang, J; Yu, YH; Liu, ZL; Lin, LY | |
| Corresponding Author | Tan, LW() |
| 2003 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| ISSN | 0022-0248 |
| Volume | 247Issue:3-4Pages:255-260 |
| Abstract | In this paper, we report the fabrication of Si-based double-hetero-epitaxial silicon on insulator (SOI) structure Si/gamma-Al2O3/Si. Firstly, single crystalline gamma-Al2O3(100) insulator films were grown epitaxially on Si(100) using the sources of TMA (Al(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. Afterwards, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a chemical vapor deposition method similar to the silicon on sapphire epitaxial growth. The Si/gamma-Al2O3/Si SOL materials are characterized in detail by reflect high-energy electron diffraction, X-ray diffraction and Auger energy spectrum (AES) techniques. The insulator layer of gamma-Al2O3 has an excellent dielectric property. The leakage current is less than 1 x 10(-10) A/cm(2) when the electric field is below 1.3 MV/ cm. The Si film grown on gamma-Al2O3/Si epi-substrates was single crystalline. Meanwhile, the AES depth profile of the SOL structure shows that the composition of gamma-Al2O3 film is uniform, and the carbon contamination is not observed. Additionally, the gamma-Al2O3/Si epi-substrates are suitable candidates as a platform for a variety of active layers such as GaN, SiC and GeSi. It shows a bright future for microelectronic and optical electronics applications. (C) 2002 Elsevier Science B.V. All rights reserved. |
| Keyword | heteroepitaxial growth gamma-Al2O3 silicon silicon on insulator |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000180362900004 |
| Publisher | ELSEVIER SCIENCE BV |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/116843 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Tan, LW |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Tan, LW,Wang, QY,Wang, J,et al. Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si[J]. JOURNAL OF CRYSTAL GROWTH,2003,247(3-4):255-260. |
| APA | Tan, LW,Wang, QY,Wang, J,Yu, YH,Liu, ZL,&Lin, LY.(2003).Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si.JOURNAL OF CRYSTAL GROWTH,247(3-4),255-260. |
| MLA | Tan, LW,et al."Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si".JOURNAL OF CRYSTAL GROWTH 247.3-4(2003):255-260. |
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