IMR OpenIR
Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si
Tan, LW; Wang, QY; Wang, J; Yu, YH; Liu, ZL; Lin, LY
Corresponding AuthorTan, LW()
2003
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume247Issue:3-4Pages:255-260
AbstractIn this paper, we report the fabrication of Si-based double-hetero-epitaxial silicon on insulator (SOI) structure Si/gamma-Al2O3/Si. Firstly, single crystalline gamma-Al2O3(100) insulator films were grown epitaxially on Si(100) using the sources of TMA (Al(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. Afterwards, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a chemical vapor deposition method similar to the silicon on sapphire epitaxial growth. The Si/gamma-Al2O3/Si SOL materials are characterized in detail by reflect high-energy electron diffraction, X-ray diffraction and Auger energy spectrum (AES) techniques. The insulator layer of gamma-Al2O3 has an excellent dielectric property. The leakage current is less than 1 x 10(-10) A/cm(2) when the electric field is below 1.3 MV/ cm. The Si film grown on gamma-Al2O3/Si epi-substrates was single crystalline. Meanwhile, the AES depth profile of the SOL structure shows that the composition of gamma-Al2O3 film is uniform, and the carbon contamination is not observed. Additionally, the gamma-Al2O3/Si epi-substrates are suitable candidates as a platform for a variety of active layers such as GaN, SiC and GeSi. It shows a bright future for microelectronic and optical electronics applications. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywordheteroepitaxial growth gamma-Al2O3 silicon silicon on insulator
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000180362900004
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/116845
Collection中国科学院金属研究所
Corresponding AuthorTan, LW
Affiliation1.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Tan, LW,Wang, QY,Wang, J,et al. Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si[J]. JOURNAL OF CRYSTAL GROWTH,2003,247(3-4):255-260.
APA Tan, LW,Wang, QY,Wang, J,Yu, YH,Liu, ZL,&Lin, LY.(2003).Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si.JOURNAL OF CRYSTAL GROWTH,247(3-4),255-260.
MLA Tan, LW,et al."Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si".JOURNAL OF CRYSTAL GROWTH 247.3-4(2003):255-260.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Tan, LW]'s Articles
[Wang, QY]'s Articles
[Wang, J]'s Articles
Baidu academic
Similar articles in Baidu academic
[Tan, LW]'s Articles
[Wang, QY]'s Articles
[Wang, J]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Tan, LW]'s Articles
[Wang, QY]'s Articles
[Wang, J]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.