Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si

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	Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si
	Tan, LW ; Wang, QY ; Wang, J ; Yu, YH ; Liu, ZL ; Lin, LY
通讯作者	Tan, LW()
	2003
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	247 期号:3-4 页码:255-260
摘要	In this paper, we report the fabrication of Si-based double-hetero-epitaxial silicon on insulator (SOI) structure Si/gamma-Al2O3/Si. Firstly, single crystalline gamma-Al2O3(100) insulator films were grown epitaxially on Si(100) using the sources of TMA (Al(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. Afterwards, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a chemical vapor deposition method similar to the silicon on sapphire epitaxial growth. The Si/gamma-Al2O3/Si SOL materials are characterized in detail by reflect high-energy electron diffraction, X-ray diffraction and Auger energy spectrum (AES) techniques. The insulator layer of gamma-Al2O3 has an excellent dielectric property. The leakage current is less than 1 x 10(-10) A/cm(2) when the electric field is below 1.3 MV/ cm. The Si film grown on gamma-Al2O3/Si epi-substrates was single crystalline. Meanwhile, the AES depth profile of the SOL structure shows that the composition of gamma-Al2O3 film is uniform, and the carbon contamination is not observed. Additionally, the gamma-Al2O3/Si epi-substrates are suitable candidates as a platform for a variety of active layers such as GaN, SiC and GeSi. It shows a bright future for microelectronic and optical electronics applications. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词	heteroepitaxial growth gamma-Al2O3 silicon silicon on insulator
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000180362900004
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/116845
专题	中国科学院金属研究所
通讯作者	Tan, LW
作者单位	1.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Tan, LW,Wang, QY,Wang, J,et al. Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si[J]. JOURNAL OF CRYSTAL GROWTH,2003,247(3-4):255-260.
APA	Tan, LW,Wang, QY,Wang, J,Yu, YH,Liu, ZL,&Lin, LY.(2003).Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si.JOURNAL OF CRYSTAL GROWTH,247(3-4),255-260.
MLA	Tan, LW,et al."Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si".JOURNAL OF CRYSTAL GROWTH 247.3-4(2003):255-260.