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Electron-beam induced nucleation and growth in amorphous GaAs
Li, ZC; Liu, L; He, LL; Xu, YB
Corresponding AuthorLi, ZC()
2003
Source PublicationACTA METALLURGICA SINICA
ISSN0412-1961
Volume39Issue:1Pages:13-16
AbstractIn situ observation of electron-beam-irradiation induced crystallization in amorphous GaAs has been performed using high-resolution electron microscopy. The results show that clusters with the size of several atoms formed during the initial irradiation, and crystallization occurred along the clusters. Most of the crystallized grains have the same crystallographic orientation, and the others are twinning with the former. The crystallization rate is closely related to the electron-beam current. The crystallization is contributed to the electron energy rather than the temperature increase induced by electron beam. The mechanism and model for the crystallization induced by irradiation have been discussed.
Keywordamorphous GaAs electron-beam irradiation crystallization in situ observation
Indexed BySCI
Language英语
WOS Research AreaMetallurgy & Metallurgical Engineering
WOS SubjectMetallurgy & Metallurgical Engineering
WOS IDWOS:000180699100004
PublisherSCIENCE CHINA PRESS
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/117510
Collection中国科学院金属研究所
Corresponding AuthorLi, ZC
AffiliationChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Li, ZC,Liu, L,He, LL,et al. Electron-beam induced nucleation and growth in amorphous GaAs[J]. ACTA METALLURGICA SINICA,2003,39(1):13-16.
APA Li, ZC,Liu, L,He, LL,&Xu, YB.(2003).Electron-beam induced nucleation and growth in amorphous GaAs.ACTA METALLURGICA SINICA,39(1),13-16.
MLA Li, ZC,et al."Electron-beam induced nucleation and growth in amorphous GaAs".ACTA METALLURGICA SINICA 39.1(2003):13-16.
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