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Deep level defects in high temperature annealed InP
Dong, ZY; Zhao, YM; Zeng, YP; Duan, ML; Lin, LY
Corresponding AuthorDong, ZY(dongzy@red.semi.ac.cn)
2004-06-01
Source PublicationSCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE
ISSN1006-9321
Volume47Issue:3Pages:320-326
AbstractDeep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed in iron phosphide ambient, while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13 eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.
KeywordInP defects annealing ambience
DOI10.1360/03ye0283
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Materials Science
WOS SubjectEngineering, Multidisciplinary ; Materials Science, Multidisciplinary
WOS IDWOS:000223317500006
PublisherSCIENCE CHINA PRESS
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/118358
Collection中国科学院金属研究所
Corresponding AuthorDong, ZY
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Dong, ZY,Zhao, YM,Zeng, YP,et al. Deep level defects in high temperature annealed InP[J]. SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,2004,47(3):320-326.
APA Dong, ZY,Zhao, YM,Zeng, YP,Duan, ML,&Lin, LY.(2004).Deep level defects in high temperature annealed InP.SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,47(3),320-326.
MLA Dong, ZY,et al."Deep level defects in high temperature annealed InP".SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE 47.3(2004):320-326.
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