Deep level defects in high temperature annealed InP

doi:10.1360/03ye0283

IMR OpenIR

	Deep level defects in high temperature annealed InP
	Dong, ZY; Zhao, YM; Zeng, YP; Duan, ML; Lin, LY
通讯作者	Dong, ZY(dongzy@red.semi.ac.cn)
	2004-06-01
发表期刊	SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE
ISSN	1006-9321
卷号	47 期号:3 页码:320-326
摘要	Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed in iron phosphide ambient, while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13 eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.
关键词	InP defects annealing ambience
DOI	10.1360/03ye0283
收录类别	SCI
语种	英语
WOS研究方向	Engineering ; Materials Science
WOS类目	Engineering, Multidisciplinary ; Materials Science, Multidisciplinary
WOS记录号	WOS:000223317500006
出版者	SCIENCE CHINA PRESS
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/118358
专题	中国科学院金属研究所
通讯作者	Dong, ZY
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Dong, ZY,Zhao, YM,Zeng, YP,et al. Deep level defects in high temperature annealed InP[J]. SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,2004,47(3):320-326.
APA	Dong, ZY,Zhao, YM,Zeng, YP,Duan, ML,&Lin, LY.(2004).Deep level defects in high temperature annealed InP.SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,47(3),320-326.
MLA	Dong, ZY,et al."Deep level defects in high temperature annealed InP".SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE 47.3(2004):320-326.