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Cr-O-N films deposited by arc ion plating as active diffusion barriers
Wang, QM; Guo, MH; Ke, PL; Sun, C; Huang, RF; Wen, LS
Corresponding AuthorWang, QM(qmwang@imr.ac.cn)
2004-12-01
Source PublicationACTA METALLURGICA SINICA
ISSN0412-1961
Volume40Issue:12Pages:1264-1268
AbstractCr-O-N films with different chemical composition were deposited using arc ion plating (AIP) between NiCoCrAlY coatings and the DSM11 substrate as diffusion barriers. The inhibition effects of the diffusion barriers on the interdiffusion of the alloy elements in the DSM11/CrO-N/NiCoCrAlY system were studied after exposured at 900 degreesC for 1400 h. The influences of the barriers on the oxidation kinetics were also investigated. The results indicate that the Cr-O-N layers can change into Al-rich oxide layers with active bonding with the coatings and the substrates during the high temperature exposure. The Al-rich oxide layers hindered the interdiffusion of the alloying elements between DSM11 substrate and NiCoCrAlY coating. Thus the Cr-O-N layers can act as active diffusion barrier. The O and N compositions in the Cr-O-N layer affect the continuity and density of the Al-rich oxide layers, and influence the inhibition effect of the diffusion barriers accordingly. All the Cr-O-N barriers decreased the weight gain of the NiCoCrAlY coatings at 900 degreesC. The improvement extent of the Cr-O-N barriers on the oxidation behavior of the NiCoCrAlY coatings is corresponding with the inhibition capacity of the barriers.
KeywordCr-O-N reactive diffusion barrier arc ion plating (AIP)
Indexed BySCI
Language英语
WOS Research AreaMetallurgy & Metallurgical Engineering
WOS SubjectMetallurgy & Metallurgical Engineering
WOS IDWOS:000226107700007
PublisherSCIENCE CHINA PRESS
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/118532
Collection中国科学院金属研究所
Corresponding AuthorWang, QM
AffiliationChinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Wang, QM,Guo, MH,Ke, PL,et al. Cr-O-N films deposited by arc ion plating as active diffusion barriers[J]. ACTA METALLURGICA SINICA,2004,40(12):1264-1268.
APA Wang, QM,Guo, MH,Ke, PL,Sun, C,Huang, RF,&Wen, LS.(2004).Cr-O-N films deposited by arc ion plating as active diffusion barriers.ACTA METALLURGICA SINICA,40(12),1264-1268.
MLA Wang, QM,et al."Cr-O-N films deposited by arc ion plating as active diffusion barriers".ACTA METALLURGICA SINICA 40.12(2004):1264-1268.
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