Cr-O-N films deposited by arc ion plating as active diffusion barriers

IMR OpenIR

	Cr-O-N films deposited by arc ion plating as active diffusion barriers
	Wang, QM; Guo, MH; Ke, PL; Sun, C; Huang, RF; Wen, LS
通讯作者	Wang, QM(qmwang@imr.ac.cn)
	2004-12-01
发表期刊	ACTA METALLURGICA SINICA
ISSN	0412-1961
卷号	40 期号:12 页码:1264-1268
摘要	Cr-O-N films with different chemical composition were deposited using arc ion plating (AIP) between NiCoCrAlY coatings and the DSM11 substrate as diffusion barriers. The inhibition effects of the diffusion barriers on the interdiffusion of the alloy elements in the DSM11/CrO-N/NiCoCrAlY system were studied after exposured at 900 degreesC for 1400 h. The influences of the barriers on the oxidation kinetics were also investigated. The results indicate that the Cr-O-N layers can change into Al-rich oxide layers with active bonding with the coatings and the substrates during the high temperature exposure. The Al-rich oxide layers hindered the interdiffusion of the alloying elements between DSM11 substrate and NiCoCrAlY coating. Thus the Cr-O-N layers can act as active diffusion barrier. The O and N compositions in the Cr-O-N layer affect the continuity and density of the Al-rich oxide layers, and influence the inhibition effect of the diffusion barriers accordingly. All the Cr-O-N barriers decreased the weight gain of the NiCoCrAlY coatings at 900 degreesC. The improvement extent of the Cr-O-N barriers on the oxidation behavior of the NiCoCrAlY coatings is corresponding with the inhibition capacity of the barriers.
关键词	Cr-O-N reactive diffusion barrier arc ion plating (AIP)
收录类别	SCI
语种	英语
WOS研究方向	Metallurgy & Metallurgical Engineering
WOS类目	Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000226107700007
出版者	SCIENCE CHINA PRESS
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/118532
专题	中国科学院金属研究所
通讯作者	Wang, QM
作者单位	Chinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Wang, QM,Guo, MH,Ke, PL,et al. Cr-O-N films deposited by arc ion plating as active diffusion barriers[J]. ACTA METALLURGICA SINICA,2004,40(12):1264-1268.
APA	Wang, QM,Guo, MH,Ke, PL,Sun, C,Huang, RF,&Wen, LS.(2004).Cr-O-N films deposited by arc ion plating as active diffusion barriers.ACTA METALLURGICA SINICA,40(12),1264-1268.
MLA	Wang, QM,et al."Cr-O-N films deposited by arc ion plating as active diffusion barriers".ACTA METALLURGICA SINICA 40.12(2004):1264-1268.