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MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING
Wang Bin1,2; Xong Liangyin1,2; Liu Shi1,2
Corresponding AuthorLiu Shi(sliu@imr.ac.cn)
2016-01-11
Source PublicationACTA METALLURGICA SINICA
ISSN0412-1961
Volume52Issue:1Pages:10-16
AbstractHigh, stable and durable secondary electron emission is an essential property for the application of dynodes of electron multipliers and photomultiplier tubes. The MgO film have been widely used as dynode materials for the applications owing to its good secondary electron emission properties. In this work, MgO and CoO doped MgO films, as secondary electron emission films, were prepared by radio-frequency reactive sputtering deposition on the stainless steel substrate, and also another MgO film at the surface of activated AgMg alloy was prepared. The effect of preparation processes on the secondary electron emission properties of the films was focused. It was found that the film thickness significantly affected the resistance to electron beam bombardment. With the increase of film thickness, the resistance to electron beam bombardment was significantly enhanced. Radio-frequency reactive sputtering deposition could control the film thickness by varying deposition time. The surface quality of MgO film is quite sensitive to the oxygen partial pressure of the deposition atmosphere. Higher oxygen partial pressure caused higher surface roughness, which was harmful to the secondary electron emission. After doping with CoO, the surface of MgO films were much flatter and smoother, resulting in the improvement of the secondary electron emission coefficient. The CoO doping also reduced of the sensitivity of film surface quality to the oxygen partial pressure. The secondary electron emission coefficient of CoO doped MgO film sharply decreased after heated at 550 degrees C for 1 h due to the surface quality degrading and the thermal decomposition induced loss of oxygen. Elevating the substrate temperature or oxygen partial pressure during deposition accounted for the presence of metallic Mg in film and the degrading of surface quality, which finally lead to lower secondary electron emission coefficient.
Keywordradio-frequency reactive sputtering thickness of film surface roughness secondary electron emission coefficient resistance to electron beam bombardment
Indexed BySCI
Language英语
WOS Research AreaMetallurgy & Metallurgical Engineering
WOS SubjectMetallurgy & Metallurgical Engineering
WOS IDWOS:000369466200002
PublisherSCIENCE PRESS
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/121580
Collection中国科学院金属研究所
Corresponding AuthorLiu Shi
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Key Lab Nucl Mat & Safety Assessment, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Wang Bin,Xong Liangyin,Liu Shi. MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING[J]. ACTA METALLURGICA SINICA,2016,52(1):10-16.
APA Wang Bin,Xong Liangyin,&Liu Shi.(2016).MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING.ACTA METALLURGICA SINICA,52(1),10-16.
MLA Wang Bin,et al."MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING".ACTA METALLURGICA SINICA 52.1(2016):10-16.
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